Surface characterization of LEC Si-GaAs using photoreflectance with sub-bandgap excitation-Reference-Cited by-同舟云学术

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Surface characterization of LEC Si-GaAs using photoreflectance with sub-bandgap excitation

Published:1992-10 Issue:10 Volume:35 Page:1503-1511
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Bhimnathwala H.,Borrego J.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Photoreflectance and the electric fields in a GaAs depletion region

2. Photoreflectance characterization of surface Fermi level in as‐grown GaAs(100)

3. Photoreflectance surface Fermi level measurements of GaAs subjected to various chemical treatments

4. Photoreflectance study of surface Fermi level in GaAs and GaAlAs

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1. Photoreflectance system based on vacuum ultraviolet laser at 177.3 nm;Chinese Physics B;2022-10-01

2. Modulation above Pump Beam Energy in Photoreflectance;International Journal of Photoenergy;2017

3. Novel modulation reflectance spectroscopy of semiconductor heterostructures;physica status solidi (a);2005-05

4. Comparison of multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity;Semiconductor Science and Technology;1996-12-01

5. Nondestructive, room temperature analysis/qualification of wafer-sized semiconductor device structures using contactless electromodulation spectroscopy;Solid-State Electronics;1995-06

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