Current dependence of base-collector capacitance of bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Bipolar transistor design for optimized power-delay logic circuits
2. The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHz
3. Base-collector junction capacitance of bipolar transistors operating at high current densities
4. Forward-voltage capacitance and thickness of p-n junction space-charge regions
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1. Improved VBIC model for SiGe HBTs with an unified model of heterojunction barrier effects;IEEE Transactions on Electron Devices;2006-04
2. Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data;IEEE Electron Device Letters;2001-03
3. Simulation study of high injection effects and parasitic barrier formation in SiGe HBTs operating at high current densities;Solid-State Electronics;2000-12
4. A Gummel–Poon model for pnp heterojunction bipolar transistors with a compositionally graded base;Solid-State Electronics;2000-06
5. Dynamic formation of a parasitic barrier to electron flow in SiGe HBTs operating at high current densities;Microelectronics Journal;2000-05
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