Investigation of heterostructure-confinement-emitter transistors-Reference-Cited by-同舟云学术

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Investigation of heterostructure-confinement-emitter transistors

Published:1992-02 Issue:2 Volume:35 Page:117-124
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lour Wen-Shiung,Liu Wen-Chau,Wang Yeong-Her

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy

2. Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

3. A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure

4. A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)

5. Quantum-well resonant tunneling bipolar transistor operating at room temperature

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3. Supercritical fluid deposition of copper into mesoporous silicon;Thin Solid Films;2013-10

4. Phase equilibrium for surfactant Ls-54 in liquid CO2 with water and solubility estimation using the Peng–Robinson equation of state;Fluid Phase Equilibria;2010-11

5. Low temperature synthesis of fibres composed of carbon–nickel nanoparticles in super-critical carbon dioxide;Chemical Physics Letters;2010-06

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