Mechanism of operation of field-effect devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Characteristics of static induction transistors: Effects of series resistance
2. Field-effect transistor versus analog transistor (static induction transistor)
3. Potential feedback in field‐effect devices
4. R.K. Gupta (to be published).
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1. Static-Induction Transistor;Complete Guide to Semiconductor Devices;2010-11-03
2. Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors;Materials Science Forum;2002-04
3. Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures;Japanese Journal of Applied Physics;1999-06-15
4. Short-channel effects and drain-induced barrier lowering in nanometer-scale GaAs MESFET's;IEEE Transactions on Electron Devices;1993-06
5. A static induction transistor with insulator cover-gate and with triode-like I-V characteristics;Solid-State Electronics;1990-03
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