Effect of temperature and voltage sweep rate on characteristics of MIS capacitors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Si-SiO[sub 2] Fast Interface State Measurements
2. Low-temperature hysteresis effects in metal-oxide-silicon capacitors caused by surface-state trapping
3. Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures
4. Non-equilibrium C-V and I-V characteristics of metal-insulator-semiconductor capacitors
5. Theory of dynamic charge and capacitance characteristics in MIS systems containing discrete surface traps
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