Analysis of junction-barrier-controlled Schottky (JBS) rectifier characteristics
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. The pinch rectifier: A low-forward-drop high-speed power diode
2. Silicon Integrated Circuits, Suppl. 2 B;Baliga,1981
3. Analysis of the Impurity Atom Distribution Near the Diffusion Mask for a Planar p-n Junction
4. S.M. Sze, p. 245. New York, Wiley (1981)
5. A power junction gate field-effect transistor structure with high blocking gain
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