Threshold and subthreshold characteristics theory for a very small buried-channel mosfet using a majority-carrier distribution model
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. D.C. and high-frequency characteristics of built-in channel MOS-FETs
2. Analysis of the deep depletion MOSFET and the use of the d.c. characteristics for determining bulk-channel charge-coupled device parameters
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4. Device Design Considerations for Ion Implanted n-Channel MOSFETs
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1. Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime;Micromachines;2018-12-22
2. Proposal of the Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor);Soi Lubistors;2013-08-30
3. A physics-based short-channel current–voltage model for buried-channel MOSFETs;Solid-State Electronics;1999-07
4. Der MOS-Transistor als Funktionselement. Grundlagen, Wirkprinzip und Kennlinienmodell;MOS-Feldeffekttransistoren;1994
5. Current Trends in MOS Process Integration;VLSI Electronics Microstructure Science;1989
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