A simple parameter extraction method for ultra-thin oxide MOSFETs-Reference-Cited by-同舟云学术

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A simple parameter extraction method for ultra-thin oxide MOSFETs

Published:1995-06 Issue:6 Volume:38 Page:1175-1177
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

McLarty P.K,Cristoloveanu S,Faynot O,Misra V,Hauser J.R,Wortman J.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Measurement of MOSFET constants

2. Experimental determination of short-channel MOSFET parameters

3. An improved method of MOSFET modeling and parameter extraction

4. An accurate large-signal MOS transistor model for use in computer-aided design

5. Proc. ESSDERC'91;Wildau,1991

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