The role of hydrogen in current-induced degradation of carbon-doped heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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The role of hydrogen in current-induced degradation of carbon-doped heterojunction bipolar transistors

Published:1995-06 Issue:6 Volume:38 Page:1137-1141
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ren F,Abernathy C.R,Chu S.N.G,Lothian J.R,Pearton S.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. HEMTS and HBTs: Devices Fabrication and Circuits;Kim,1991

2. GaAs IC-Symp.;Hafizi,1990

3. Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure

4. Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors

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1. Review—Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs;ECS Journal of Solid State Science and Technology;2023-05-31

2. Elimination of Burn-in Effect in Metal–Organic Chemical Vapor Deposition Grown InGaP/GaAs Heterojunction Bipolar Transistors by MultistepIn situAnnealing;Japanese Journal of Applied Physics;2008-01-18

3. Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs;Solid-State Electronics;2002-09

4. Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer;Journal of Applied Physics;2002-09

5. Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors;Solid-State Electronics;2001-10

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