On the conductance of p-i-n junctions at high microwave fields
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. The silicon PIN diode as a microwave radar protector at megawatt levels
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Prediction of the charge carriers stationary distribution in the active region of the p-i-n structures by the perturbation theory methods;50;2021-06-29
2. Thermal design of microwave PIN diodes;Solid-State Electronics;1979-02
3. Avalanche breakdown voltage of a microwave PIN diode;Solid-State Electronics;1976-07
4. Effect of mobile carrier diffusion and its treatment in simulation programs for p-i-n switches and limiters;Solid-State Electronics;1974-07
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