Monte-Carlo calculations of hot-electron transport in metal films, with special reference to the metal-base transistor-Reference-Cited by-同舟云学术

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Monte-Carlo calculations of hot-electron transport in metal films, with special reference to the metal-base transistor

Published:1967-05 Issue:5 Volume:10 Page:433-440
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Loveluck J.M.,Rhoderick E.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. A new "Hot electron" triode structure with semiconductor-metal emitter

2. Hot-carrier triodes with thin-film metal base

3. Schottky Emitter Type Metal Base Transistor

4. Monte Carlo Calculations Pertaining to the Transport of Hot Electrons in Metals

5. A Practical Manual on the Monte-Carlo Method;Cashwell,1959

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo calculations of quantum yield in inhomogeneous PtSi/p-Si Schottky barriers;Semiconductor Science and Technology;1998-07-01

2. The theory of hot-electron photoemission in Schottky-barrier IR detectors;IEEE Transactions on Electron Devices;1985-01

3. Blue-Emitting S+-Implanted An-ZnS Schottky Barrier Diodes;Japanese Journal of Applied Physics;1980-05

4. A method of investigation of hot electron transport through thin metal films using the metal-base triode configuration;Thin Solid Films;1972-11

5. Comments on the conduction mechanism in Schottky diodes;Journal of Physics D: Applied Physics;1972-10-01

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