Far IR luminescence of hot holes in Ge: Diagnostics of intersubband population inversion and effects of uniaxial stress-Reference-Cited by-同舟云学术

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Far IR luminescence of hot holes in Ge: Diagnostics of intersubband population inversion and effects of uniaxial stress

Published:1988-03 Issue:3-4 Volume:31 Page:755-758
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Gavrilenko V.I.,Korotkov A.L.,Krasyl'nik Z.F.,Nikonorov V.V.,Pavlov S.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Population inversion and far-infrared emission of hot electrons in semiconductors;Andronov,1986

2. Symmetry and Deformation Effects in Semiconductors;Bir,1972

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Planar contact geometry for far-infrared germanium lasers;Applied Physics Letters;1999-06-21

2. Thermal effects in widely tunable germanium terahertz lasers;Applied Physics Letters;1998-11-09

3. Inverted distributions of hot holes in uniaxially stressed germanium;Semiconductor Science and Technology;1992-03-01

4. Spontaneous and stimulated emission of radiation from hot holes from uniaxially stressed germanium;Optical and Quantum Electronics;1991

5. Far IR cyclotron resonance and luminescence of hot holes inp-Ge;Optical and Quantum Electronics;1991

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