Nondestructive evaluation of the semiconductor interface states' density using the transverse acoustoelectric voltage-Reference-Cited by-同舟云学术

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Nondestructive evaluation of the semiconductor interface states' density using the transverse acoustoelectric voltage

Published:1986-01 Issue:1 Volume:29 Page:75-81
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Davari B.,Azar M.Tabib,Liu T.,Das P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

2. Surface states at steam-grown silicon-silicon dioxide interfaces

3. Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

4. Semiconductor Characterization Using Nondestructive Surface Acoustic Wave Technique

5. Semiconductor surface characterization using transverse acoustoelectric voltage versus voltage measurements

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-sustained acoustoelectric and photoelectric oscillations in semiconductor–piezoelectric structures;Solid-State Electronics;2000-03

2. Investigation of the role of ZnSe films on GaAs using acoustoelectric voltage spectroscopy;Journal of Applied Physics;1993-07

3. A technique for profiling the epilayer channel of surface acoustic wave devices on piezoelectric semiconductors;IEEE Transactions on Electron Devices;1993

4. Nondestructive Characterization of ZnSe/GaAs Heterostructure Using Transverse Acoustoelectric Voltage Spectroscopy;MRS Proceedings;1992

5. Effect of deep-trap level on transverse acoustoelectric voltage measurements;IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control;1991-09

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