Current gain of narrow-base transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Minority current in the base region of bipolar transistors under high-level injection conditions
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5. Limitations in microelectronics — II. Bipolar technology
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Two new generalized equations for minority-carrier transport in bipolar transistors with heavily doped base and non-uniform band structure;Semiconductor Science and Technology;1992-06-01
2. A physics‐based bipolar transistor model for low‐temperature circuit simulation;Journal of Applied Physics;1989-11
3. Parameter extraction for bipolar transistors;IEEE Transactions on Electron Devices;1989-01
4. Bulk unipolar transistors in the limit of nonpunch-through;IEE Proceedings I Solid State and Electron Devices;1987
5. Role of lifetime and energy-bandgap narrowing in diffused-junction silicon solar cells;IEE Proceedings J Optoelectronics;1987
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