Concepts of gain at an oxide-semiconductor interface and their application to the TETRAN—A tunnel emitter transistor—And to the MIS switching device
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Current multiplication in metal-insulator-semiconductor (MIS) tunnel diodes
2. Non-equilibrium effects on metal-oxide-semiconductor tunnel currents
3. L. Faraone, F. Hsue and J. G. Simmons, private communication.
4. Tunneling from an Independent-Particle Point of View
5. Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating Film
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