Surface recombination, free-carrier saturation, and dangling bonds in InP and GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. Evidence for low surface recombination velocity onn‐type InP
2. Hall Effect Measurements of Zn Implanted GaAs
3. Epitaxial growth of Cd‐doped InP from the vapor
4. Carrier Saturation in Tin‐Doped InP Films Grown by Liquid Phase Epitaxy
5. Indium Phosphide
Cited by 58 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carrier diffusion in semiconductor nanoscale resonators;Physical Review B;2024-06-03
2. Surface recombination and out-of-plane diffusivity of free excitons in hexagonal boron nitride;Physical Review B;2024-04-22
3. GaAs membrane PhC lasers threshold reduction using AlGaAs barriers and improved processing;Nanotechnology;2022-10-19
4. Recent advances in light sources on silicon;Advances in Optics and Photonics;2022-08-05
5. Facet effects on generation-recombination currents in semiconductor laser diodes;Semiconductor Science and Technology;2022-07-20
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3