Deep metal-related centres in germanium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Emission coefficients for electron and hole traps in silicon
2. Electrical properties of platinum in silicon as determined by deep‐level transient spectroscopy
3. Electronic properties of selenium‐doped silicon
4. Deep sulfur‐related centers in silicon
5. A study of deep levels in GaAs by capacitance spectroscopy
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1. Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results;Applied Sciences;2019-06-15
2. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
3. Ultrafast palladium diffusion in germanium;Journal of Materials Chemistry A;2015
4. A Deep-Level Transient Spectroscopy Study of Implanted Ge p+n and n+p Junctions by Pt-Induced Crystallization;ECS Transactions;2011-10-04
5. Physical properties of Co/n-Ge Schottky contacts;Journal of Physics D: Applied Physics;2011-03-10
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