A study of deep metal-related centres in germanium by capacitance spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Energy Levels in Silicon
2. Complex nature of gold-related deep levels in silicon
3. Excited states at deep centers in Si:S and Si:Se
4. Electronic properties of selenium‐doped silicon
5. Deep sulfur‐related centers in silicon
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1. Mn Diffusion and Reactive Diffusion in Ge: Spintronic Applications;Defect and Diffusion Forum;2015-05
2. Manganese diffusion in monocrystalline germanium;Scripta Materialia;2012-08
3. Theoretical investigation of Hf and Zr defects in c-Ge;Journal of Physics: Condensed Matter;2008-12-04
4. Germanium;digital Encyclopedia of Applied Physics;2003-04-15
5. Selenium double donors in neutron transmutation doped, isotopically controlled germaniun;Solid State Communications;1998-11
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