Amorphous-crystalline silicon anisotype heterojunctions: Built-in potential, its distribution and depletion widths-Reference-Cited by-同舟云学术

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Amorphous-crystalline silicon anisotype heterojunctions: Built-in potential, its distribution and depletion widths

Published:1987-03 Issue:3 Volume:30 Page:345-351
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rubinelli F.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Physics of Semiconductor Devices;Sze,1969

2. Heterojunctions and Metal-Semiconductor Junctions;Milnes,1972

3. Physics and Technology of Semiconductor Devices;Grove,1967

4. Depletion‐Layer Capacitance ofp+nStep Junctions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band lineup in amorphous/crystalline silicon heterojunctions and the impact of hydrogen microstructure and topological disorder;Physical Review B;2011-04-21

2. Amorphous/Crystalline (n-n) Si Heterojunction Photodetector Made by Q-Switched 0.532-mm Laser Pulses with Novel Technique;Chinese Physics Letters;2006-01-30

3. High-frequency capacitance-voltage characteristics of amorphous (undoped)/crystalline silicon heterostructures;Solid-State Electronics;1991-06

4. Interface State Density Distribution in Amorphous/Crystalline Silicon Heterostructures;Japanese Journal of Applied Physics;1989-05-20

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