Surface capacity of oxide coated semiconductors-Reference-Cited by-同舟云学术

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Surface capacity of oxide coated semiconductors

Published:1965-03 Issue:3 Volume:8 Page:211-226
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hall R.,White J.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Design Theory of Surface Field-Effect Transistor;Ihantola,1961

2. Theory of thin film transistor operation

3. Gov. I.T.D.R. 3 Contract AF33(657)-11402;Becke,1964

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Properties of Insulator-Semiconductor Interfaces on III-V Compounds;Physics and Chemistry of III-V Compound Semiconductor Interfaces;1985

2. MOS processing for III–V compound semiconductors: Overview and bibliography;Thin Solid Films;1977-10

3. Capacitance of MOS diodes on substrates doped non-uniformly near the surface;Solid-State Electronics;1976-06

4. On the photocapacitance of the MIS Structure AlSi3N4n-GaAs;Physica Status Solidi (a);1974-02-16

5. On the energy spectrum of the state on the gallium arsenide-silicon nitride interface;Soviet Physics Journal;1973-05

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