New aspects of failure mechanism in germanium tunnel diodes-Reference-Cited by-同舟云学术

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New aspects of failure mechanism in germanium tunnel diodes

Published:1971-11 Issue:11 Volume:14 Page:1137-1147
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Revesz A.G.,Reynolds J.,Lindmayer J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Permanent degradation of GaAs tunnel diodes

2. Degradation of GaAs injection devices

3. Reversible degradation effects in GaSb tunnel diodes

4. Peak Current Behavior in Ge Esaki Junctions

5. Impurity diffusion and drift in germanium tunnel-diode junctions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunnel Diode Amplifier SGEMP Response;IEEE Transactions on Nuclear Science;1979

2. Advances in Satellite Communications;Advances in Electronics and Electron Physics Volume 31;1972

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