High-temperature behavior of GaAs junctions prepared by different techniques-Reference-Cited by-同舟云学术

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High-temperature behavior of GaAs junctions prepared by different techniques

Published:1971-03 Issue:3 Volume:14 Page:191-198
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Behrndt Klaus H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Proc. 1968 Microelectronics Conf.;Behrndt,1968

2. Proc. 1968 GOMAC Conf.,1968

3. Temperature Dependence and Lifetime in Semiconductor Junctions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heteroepitaxial Growth and Characterization of Compound Semiconductors;Heteroepitaxial Semiconductors for Electronic Devices;1978

2. Material and device properties of heteroepitaxial GaAs on BeO;Solid-State Electronics;1974-08

3. Ion implantation doping of compound semiconductors;Physica Status Solidi (a);1973-03-16

4. GaAs vapor-grown bipolar transistors;Solid-State Electronics;1972-01

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