Direct recombination in GaAs and some consequences in transistor design-Reference-Cited by-同舟云学术

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Direct recombination in GaAs and some consequences in transistor design

Published:1961-05 Issue:4 Volume:2 Page:195-201
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mayburg S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide

2. Report of the Meeting on Semiconductors, Rugby;Edmond,1957

3. Progress in Semiconductors III;Gibson,1958

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chapter 10 Gallium Arsenide Radiation Detectors and Spectrometers;Semiconductors for Room Temperature Nuclear Detector Applications;1995

2. Chapter 2 Minority-Carrier Lifetime in III–V Semiconductors;Semiconductors and Semimetals;1993

3. A new sequentially etched quantum‐yield technique for measuring surface recombination velocity and diffusion lengths of solar cells;Journal of Applied Physics;1987-06

4. Power devices in gallium arsenide;IEE Proceedings I Solid State and Electron Devices;1985

5. Impurity and Defect Levels (Experimental) in Gallium Arsenide;Advances in Electronics and Electron Physics Volume 61;1983

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