Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation-Reference-Cited by-同舟云学术

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Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonics expansion of the Boltzmann transport equation

Published:1993-04 Issue:4 Volume:36 Page:575-581
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Gnudi A.,Ventura D.,Baccarani G.,Odeh F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. A scattering matrix approach to device simulation

2. Efficient calculation of ionization coefficients in silicon from the energy distribution function

3. A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation

4. An efficient deterministic solution of the space-dependent Boltzmann transport equation for silicon

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