Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si1−xGex layers-Reference-Cited by-同舟云学术

Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si1−xGex layers

Published:1993-12 Issue:12 Volume:36 Page:1763-1771
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Poortmans J.,Jain S.C.,Totterdell D.H.J.,Caymax M.,Nijs J.F.,Mertens R.P.,Van Overstraeten R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

2. Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arrays

3. SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

4. Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers

5. Bandgap Narrowing Due to Heavy Doping in Si1-xGex Layers

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