Magnetic tuning of the metal-insulator transition in n -InSb at very low temperatures-Reference-Cited by-同舟云学术

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Magnetic tuning of the metal-insulator transition in n -InSb at very low temperatures

Published:1985-01 Issue:1-2 Volume:28 Page:109-112
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mansfield R.,Abdul-Garder M.,Fozooni P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Metal-insulator transition in a doped semiconductor

2. Hydrogen atom in a strong magnetic field

3. Galvanomagnetic Properties of n-Type InSb at Low Temperatures II. Magnetic Field-Induced Metal-Nonmetal Transition

4. Hopping conduction in n-type indium antimonide below 1 k

5. Evidence for localization effects in compensated semiconductors

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1. Epitaxial growth and electronic properties of few-layer stanene on InSb (1 1 1);2D Materials;2019-10-01

2. Unification of the metal-insulator transitions driven by the impurity concentration and by the magnetic field in arsenic-doped germanium;Physical Review B;1997-01-15

3. ESTIMATION OF THE EFFECTIVE DIELECTRIC RESPONSE FROM HOPPING ACTIVATION ENERGY IN THE VICINITY OF INSULATOR-METAL TRANSITION IN SEMICONDUCTORS;International Journal of Modern Physics B;1996-01-10

4. A quasi-universal percolation approach of hopping activation energy and metal-nonmetal transition in semiconductors;Physica B: Condensed Matter;1995-07

5. Localization: theory and experiment;Reports on Progress in Physics;1993-12-01

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