Effect of the electron temperature on the gate-induced charge in small size mos transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Review of experimental aspects of hot electron transport in MOS structures
2. 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints
3. Hot-carrier constraints on transient transport in very small semiconductor devices
4. Transport Properties of Electrons in Inverted Silicon Surfaces
5. Field Effect Transistors;Hofstein,1965
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An improved analytical solution of energy balance equation for short-channel SOI MOSFET's and transverse-field-induced carrier heating;IEEE Transactions on Electron Devices;1995
2. Der MOS-Transistor als Funktionselement. Grundlagen, Wirkprinzip und Kennlinienmodell;MOS-Feldeffekttransistoren;1994
3. Experimental technology and performance of 0.1-µm-gate-length FETs operated at liquid-nitrogen temperature;IBM Journal of Research and Development;1990-07
4. Sub-0.1 μm Silicon MOSFETs;ESSDERC ’89;1989
5. Nanostructure technology;IBM Journal of Research and Development;1988-07
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