Radiation effects on thin-oxide MOS capacitors caused by electron beam evaporation of aluminum
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. EFFECTS OF X‐RAY IRRADIATION ON THE CHARACTERISTICS OF METAL‐OXIDE‐SILICON STRUCTURES
2. Electron trapping in SiO2due to electron‐beam deposition of aluminum
3. Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors
4. Radiation-Induced Increase of Mobile Sodium in MOS Capacitors
5. Surface Passivation of Semiconductors
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