Delay times in Si MOSFETS in the 4.2–400 K temperature range

Author:

Kamgar Avid,Johnston R.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Circuit with Scaled NMOS Digest of 7th European Solid-State Circuits Conf.;Fraser,1981

2. MOS Device and Integrated Circuits at Liquid Nitrogen Temperature;Gaensslen,1981

3. 1 /spl mu/m MOSFET VLSI technology. II. Device designs and characteristics for high-performance logic applications

4. A review of some charge transport properties of silicon

5. Miniaturization of Si MOSFET's at 77 K

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1. Cryogenic Embedded System to Support Quantum Computing: From 5-nm FinFET to Full Processor;IEEE Transactions on Quantum Engineering;2023

2. Circuits and Applications;Device and Circuit Cryogenic Operation for Low Temperature Electronics;2001

3. Bauformen des MOSFET;MOS-Feldeffekttransistoren;1994

4. Low-Temperature CMOS;VLSI Electronics Microstructure Science;1989

5. Operational characteristics of CMOS op-amps at cryogenic temperatures;Solid-State Electronics;1988-02

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