On the temperature coefficient of the MOSFET threshold voltage
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. R.S.C. Cobbold, Theory and Applications of FETs, Wiley-Interscience, New York
2. S.M. Sze, Physics of Semiconductor Devices, Wiley-Interscience, New York, p. 452
3. Threshold-voltage temperature drift in ion-implanted MOS transistors
4. The temperature dependence of threshold voltages in submicrometer CMOS
5. Device Design Considerations for Ion Implanted n-Channel MOSFETs
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