Integral expression for 1/tf noise in mosfets at arbitrary drain bias
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states
2. Discrimination between two noise models in metal‐oxide‐semiconductor field‐effect transistors
3. L.K.J.^Vandamme, private communication.
4. Comparison of two noise models in MOSFETs
5. Dependence of MOSFET noise parameters in n-channel MOSFETs on oxide thickness
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1. Analysis of the Low-Frequency Noise in Graded-Channel and Standard SOI nMOSFET;ECS Transactions;2010-10-01
2. Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions;IEEE Transactions on Electron Devices;2002-09
3. On the flicker noise in submicron silicon MOSFETs;Solid-State Electronics;1999-05
4. 1/f noise in HgCdTe metal–insulator–semiconductor infrared detectors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-09
5. Small-signal parameters and thermal noise of the four-terminal MOSFET in non-quasistatic operation;Solid-State Electronics;1990-05
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