Profiling of stress induced interface states in short channel MOSFETs using a composite charge pumping technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Effect of electron trapping on IGFET characteristics
2. A reliable approach to charge-pumping measurements in MOS transistors
3. Charge pumping in MOS devices
4. The use of charge pumping currents to measure surface state densities in MOS transistors
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4. Si-SiO2 Interface, Electronic Properties;digital Encyclopedia of Applied Physics;2003-04-15
5. Basics and applications of charge pumping in submicron MOSFETs© 1997 IEEE. Reprinted, with permission, from Proc. 1997 21st International Conference on Microelectronics, Nis, Yugoslavia, 14–17 September 1997, Vol. 2, pp. 581–589.;Microelectronics Reliability;1998-09
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