On the scaling of an ion-implanted silicon MESFET-Reference-Cited by-同舟云学术

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On the scaling of an ion-implanted silicon MESFET

Published:1989-02 Issue:2 Volume:32 Page:119-123
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chatttopadhyay S.N.,Pal B.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Ion-implanted Si MESFET ring oscillators

2. Finite-element simulation of GaAs MESFET's with lateral doping profiles and submicron gates

3. IEEE Electron Device Meet. Tech. Dig.;Dennard,1972

4. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

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