Modeling the substrate depletion region for GaAs FETs fabricated on semi-insulating substrates-Reference-Cited by-同舟云学术

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Modeling the substrate depletion region for GaAs FETs fabricated on semi-insulating substrates

Published:1989-02 Issue:2 Volume:32 Page:165-168
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

George Peter,Ko Ping-K.,Hu Chenming

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Electrical compensation in semi‐insulating GaAs

2. Proc. Int. Symp. GaAs and Related Compounds;Martin,1985

3. Proc. Int. Symp. GaAs and Related Compounds;Ikoma,1985

4. Physics of Semiconductor Devices;Sze,1981

5. Pisces II User's Manual;Pinto,1984

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Residual Stress Mapping of Epoxy Molding Compound in a Ball Grid Array Microelectronic Package Using a Fluorescent Sensor;Applied Spectroscopy;2004-02

2. Sidegating in GaAs metal‐semiconductor field‐effect transistors under low‐level injection;Journal of Applied Physics;1991-12

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