Modelling of single barrier heterostructures including band bending and non-parabolicity effects of the band structure-Reference-Cited by-同舟云学术

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Modelling of single barrier heterostructures including band bending and non-parabolicity effects of the band structure

Published:1995-02 Issue:2 Volume:38 Page:357-365
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kirilov M.,Nakov V.,Trott M.,Schnittler Ch.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Electron tunnelling in GaAs/AlGaAs/GaAs single-barrier heterojunction diodes: electron-phonon interaction effects

2. Γ‐Xintervalley transfer in single AlAs barriers under hydrostatic pressure

3. Scattering-assisted tunneling in double-barrier diodes: Scattering rates and valley current

4. InAs/AlSb/GaSb single‐barrier interband tunneling diodes with high peak‐to‐valley ratios at room temperature

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic quantum devices;Physical Models of Semiconductor Quantum Devices;1999

2. AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactors;Journal of Applied Physics;1997-12

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