A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region-Reference-Cited by-同舟云学术

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A procedure for the determination of the effective mobility in an N-MOSFET in the moderate inversion region

Published:1996-06 Issue:6 Volume:39 Page:875-883
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Banqueri J.,López-Villanueva J.A.,Gámiz F.,Carceller J.E.,Lora-Tamayo E.,Lozano M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Influence of the interface-state density on the electron mobility in silicon inversion layers

2. IEDM Tech. Dig.;Takagi,1988

3. Effects of bulk-impurity and interface-charge on the electron mobility in MOSFETs

4. Universality of electron mobility curves in MOSFETs: a Monte Carlo study

5. presented at the 24th Semiconductor Interface Specialists Conf.;Banqueri,1993

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2. Enhancement of PMOS device performance with poly-SiGe gate;IEEE Electron Device Letters;1999-05

3. Experimental determination of the effective mobility in NMOSFETs: a comparative study;Solid-State Electronics;1999-04

4. The gate bias and geometry dependence of random telegraph signal amplitudes [MOSFET];IEEE Electron Device Letters;1997-09

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