Analysis of the enhancement of the performance of a polysilicon solar cell due to simultaneous passivation of grain boundaries and back contact
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Design, fabrication, and analysis of 17-18-percent efficient surface-passivated silicon solar cells
2. Back-surface field design for n+p GaAs cells
3. High efficiency, large-area p+-n-n+ silicon solar cells
4. Physics underlying the performance of back-surface-field solar cells
5. Semiconductors and Semimetals, Vol. 11: Solar Cells;Hovel,1975
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photovoltaic properties and high efficiency of preferentially doped polysilicon solar cells;Solid-State Electronics;1995-08
2. Analytical solutions for the photocurrent and dark diffusion current of preferentially doped polysilicon solar cells;Solar Energy Materials and Solar Cells;1995-07
3. An accurate solution for the dark diffusion current of preferentially doped polysilicon solar cells;Solid-State Electronics;1994-07
4. Analysis of the effect of a uniform base drift field on the performance of a polycrystalline p/n junction solar cell;Solid-State Electronics;1990-02
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