Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked films-Reference-Cited by-同舟云学术

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Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked films

Published:1988-10 Issue:10 Volume:31 Page:1501-1503
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee S.K.,Chen J.H.,Ku Y.H.,Kwong D.L.,Nguyen B.Y.,Teng K.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. A true single-transistor oxide-nitride-oxide EEPROM device

2. A review of recent experiments pertaining to hole transport in Si3N4

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1. Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material;Scientific Reports;2017-01-12

2. Characteristics of SiO₂/Si₃N₄/SiO₂ Stacked-Gate Dielectrics Obtained via Atomic-Layer Deposition;Journal of Nanoscience and Nanotechnology;2011-07-01

3. Atomic transport during growth of ultrathin dielectrics on silicon;Surface Science Reports;1999-12

4. Effects of the Final Oxidation Step on N and O Distributions in Silicon Oxide/Nitride/Oxide Ultrathin Films;Journal of The Electrochemical Society;1999-10-01

5. Characterization of ultrathin ON stacked layers consisting of thermally grown bottom oxide and deposited silicon nitride;Solid-State Electronics;1997-07

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