Quantum and temperature effects on capacitance in degenerate P-N junctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Photocurrent transients in almost ideal siliconp‐njunctions;Journal of Applied Physics;1995-08-15
2. Spectrometry of very long‐current transients in almost ideal siliconp‐njunctions;Journal of Applied Physics;1993-07
3. SHOT AND FLICKER NOISE OF P-N JUNCTION IN THE GENERATION-RECOMBINATION, DIFFUSION AND HIGH-INJECTION REGIONS;Noise in Physical Systems and 1/f Noise 1985;1986
4. A study of planar Cd-diffused Pb1−xSnxTe photodiodes;Physica Status Solidi (a);1980-10-16
5. Depletion-layer capacitance of any type of transition between two materials;Solid-State Electronics;1975-10
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