Ohmic contact to p-type GaP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Ohmic Contact to Semiconductors;Bergh,1969
2. Contact resistances of AuGeNi, AuZn and Al to III–V compounds
3. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors
4. Dicing Induced Damage in GaP Electroluminescent Diodes
5. Optical‐coupling efficiency of GaP : N green‐light‐emitting diodes
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2. A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes;Journal of Electronic Materials;2017-03-08
3. A tantalum diffusion barrier layer for improving the output performance of AlGaInP-based light-emitting diodes;Japanese Journal of Applied Physics;2016-02-18
4. Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer;Journal of the Korean Physical Society;2016-01
5. Formation of New Beryllium Phosphide in Au(Be)/GaP Thin-Film System;Japanese Journal of Applied Physics;2006-11-08
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