An analytical expression for base transit time in an exponentially doped base bipolar transistor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Effect of exponentially graded base doping on the performance of GaAs/AlGaAs heterojunction bipolar transistors
2. Experimental study of AlGaAs/GaAs HBT device design for power applications
3. Suppression of emitter size effect on the current‐voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors
4. Optimum base doping profile for minimum base transit time
5. Influence of doping dependent bandgap grading on electrical performance and design criteria of npn AlzGa1−zAs/GaAs abrupt heterojunction bipolar transistors
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1. Electron Distribution in Non-uniformly Doped NPN Transistors;2011 UKSim 5th European Symposium on Computer Modeling and Simulation;2011-11
2. Analytical models for the base transit time of a bipolar transistor with double base epilayers;Journal of Semiconductors;2009-09
3. An iteration approach for base doping optimization to minimize the base transit time in triangular-Ge-profile SiGe HBTs;Solid-State Electronics;2007-06
4. Base transit time of a bipolar transistor considering field dependent mobility;International Journal of Electronics;2006-11
5. Growth and characterization of polycrystalline Si films prepared by hot-wire chemical vapor deposition;Thin Solid Films;2006-03
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