Recombination in small-gap Pb1−xSnxTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Recombination analysis in 10 μm Pb1−xSnxTe
2. Auger recombination and junction resistance in lead‐tin telluride
3. Auger recombination in PbTe
4. Proc. 3rd Inter. Conf. Phys. of Small-Gap Semicond.;Genzow,1978
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2. Photoconductivity of highly excited A IV B VI thin films;Applied Physics A Solids and Surfaces;1992-06
3. Optoelectronics with II–VI and IV–VI compounds;Materials Science and Engineering: B;1991-07
4. Novel device concept for silicon based infrared detectors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-05
5. Optical investigation of PbTe doping superlattices;Superlattices and Microstructures;1991-01
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