Efficient GaAsGa1−xAlxAs heterostructure electroluminescent diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature
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4. Improvement of Quantum Efficiency in Gallium Arsenide Electroluminescent Diodes
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1. Light-Emitting Devices, Part II: Device Design and Applications;Advances in Electronics and Electron Physics;1978
2. Devices for Special Applications;Semiconductor Lasers and Herterojunction Leds;1977
3. The electroluminescent properties of Zn-diffused SH GaAs light emitting diodes;International Journal of Electronics;1976-03
4. Growth of GaxIn1-xSb liquid phase epitaxial layers from a knowledge of the ternary phase diagram;Journal of Crystal Growth;1974-10
5. Properties and Applications of III–V Compound Films Deposited by Liquid Phase Epitaxy;Physics of Thin Films - Advances in Research and Development;1973
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