Chemical etchants for InAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. The Chemical Polishing of Gallium Arsenide in Bromine-Methanol
2. X‐Ray Method for the Differentiation of {111} Surfaces in AIIIBV Semiconducting Compounds
3. Effect of the Polarity of the III‐V Intermetallic Compounds on Etching
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1. A synchrotron radiation photoelectron spectroscopy study on atomic-scale wet etching of InAs (111)-A and (111)-B in acidic peroxide solutions: surface chemistry versus kinetics;Materials Today Chemistry;2022-03
2. Wet-Chemical Passivation of InAs: Toward Surfaces with High Stability and Low Toxicity;Accounts of Chemical Research;2012-06-20
3. Composition, morphology and surface recombination rate of HCl–isopropanol treated and vacuum annealed InAs(111)A surfaces;Applied Surface Science;2010-05
4. InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100°C Treatment;Journal of The Electrochemical Society;2009
5. Interdiffusion between InAs Quantum Dots and GaAs Matrices;Japanese Journal of Applied Physics;1997-08-15
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