Effect of nonuniform p-type base width on the forward switching voltage of diffused-alloyed thyristors-Reference-Cited by-同舟云学术

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Effect of nonuniform p-type base width on the forward switching voltage of diffused-alloyed thyristors

Published:1966-11 Issue:11-12 Volume:9 Page:1119-1124
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Knopp A.N.,Stickler R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Precipitates in Diffused-Alloyed Silicon Devices;Knopp,1965

2. Three-terminal P-N-P-N transistor switches

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The controlling factors in semiconductor large area alloying technology;Journal of Materials Science;1968-03

2. The di/dt capability of thyristors;Proceedings of the IEEE;1967

3. Silicon power device material problems;Proceedings of the IEEE;1967

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