Contacting n-type high resistivity GaAs for Gunn oscillators-Reference-Cited by-同舟云学术

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Contacting n-type high resistivity GaAs for Gunn oscillators

Published:1966-07 Issue:7 Volume:9 Page:733-734
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ramachandran T.B.,Santosuosso R.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference1 articles.

1. International Solid State Circuits Conference Digest of Technical Papers;Hakki,1965

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of ohmic contact materials for GaAs integrated circuits;Materials Science Reports;1990-01

2. Schottky barrier diodes;Journal of Physics E: Scientific Instruments;1972-10

3. Oscillation and Photoresponse of High-Resistivity n-GaAs Diodes;Canadian Journal of Physics;1972-06-01

4. Specific contact resistance of ohmic contacts to gallium arsenide;Solid-State Electronics;1972-04

5. Bibliography;Heterojunctions and Metal Semiconductor Junctions;1972

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