Modelling of VHF and microwave power transistors operating in quasi-saturation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Current gain and cutoff frequency falloff at high currents
2. The equivalent circuit of a transistor with a lightly doped collector operating in saturation
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region;International Journal of Electronics;1999-01
2. UNIFIED MODEL FOR BIPOLAR TRANSISTORS INCLUDING THE VOLTAGE AND CURRENT DEPENDENCE OF THE BASE AND COLLECTOR RESISTANCES AS WELL AS THE BREAKDOWN LIMITS;Le Journal de Physique Colloques;1988-09
3. A unified circuit model for bipolar transistors including quasi-saturation effects;IEEE Transactions on Electron Devices;1985-06
4. Accurate measurement of lifetime of excess base stored charge at high collector currents;IEEE Transactions on Electron Devices;1984-03
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