Polarity asymmetry of electrical characteristics of thin nitrided polyoxides prepared by in-situ multiple rapid thermal processing-Reference-Cited by-同舟云学术

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Polarity asymmetry of electrical characteristics of thin nitrided polyoxides prepared by in-situ multiple rapid thermal processing

Published:1991-02 Issue:2 Volume:34 Page:181-184
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lo G.Q.,Cheung A.W.,Kwong D.L.,Alvi N.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Interface effects and high conductivity in oxides grown from polycrystalline silicon

2. Evidence for surface asperity mechanism of conductivity in oxide grown on polycrystalline silicon

3. Silicon Oxidation Studies: Morphological Aspects of the Oxidation of Polycrystalline Silicon

4. Electrical conduction and breakdown in oxides of polycrystalline silicon and their correlation with interface texture

5. Polarity asymmetry of oxides grown on polycrystalline silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid Thermal Oxidation and Nitridation;Rapid Thermal Processing of Semiconductors;1997

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