Fabrication of a diamond p-n junction diode using the chemical vapour deposition technique-Reference-Cited by-同舟云学术

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Fabrication of a diamond p-n junction diode using the chemical vapour deposition technique

Published:1991-02 Issue:2 Volume:34 Page:139-141
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Okano Ken,Kiyota Hideo,Iwasaki Tatsuya,Nakamura Yoshitaka,Akiba Yukio,Kurosu Tateki,Iida Masamori,Nakamura Terutaro

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Synthesis of Diamond Thin Films Having Semiconductive Properties

2. Characterization of Boron-Doped Diamond Film

3. Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source

4. Abstract of the 33th Spring Meeting of the Japan Society of Applied Physics;Kamo,1986

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Micro/Nanoelectromechanical Systems;Nanotechnology;2017-09-22

2. Static and transient electrical properties of (111) diamond p-n diodes;physica status solidi (a);2007-08-30

3. Diamond semiconductor technology for RF device applications;Solid-State Electronics;2005-07

4. Diamond Films, Electrical Properties;Encyclopedia of Physical Science and Technology;2003

5. A Critical Review of Chemical Vapor-Deposited (CVD) Diamond for Electronic Applications;Critical Reviews in Solid State and Materials Sciences;2000-01

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