The fabrication and study of InGaAsP/InP double-collector heterojunction bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical modelling of abrupt InP/InGaAs HBTs;Solid-State Electronics;1996-04
2. On the design of composite-collector HBTs;Solid-State Electronics;1995-06
3. Collector-emitter offset voltage in InP/InGaAs single and double heterojunction bipolar transistors;Solid-State Electronics;1994-01
4. Low‐frequency noise in InP‐based NnPnN double heterojunction bipolar transistors;Applied Physics Letters;1992-09-28
5. Collector-emitter offset voltage in single- and double-base InGaAs(P)/InP heterojunction bipolar transistors;Solid-State Electronics;1992-04
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